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* Zhixiang Gao, Xin Ju, Haizhong Zhang*, Xiaohan Liu, Hongyu Chen, Wanfa Li, Hongliang Zhang, Lingyan Liang* and Hongtao Cao*, InP quantum dots tailored oxide thin film phototransistor for bioinspired visual adaptation, Adv. Funct. Mater. 2023, 2305959 DOI: 10.1002/adfm.202305959
*Lingyan Liang, Hengbo Zhang, Ting Li, Wanfa Li, Junhua Gao, Hongliang Zhang, Min Guo, Shangpeng Gao, Zirui He, Fengjuan Liu,* Ce Ning, Hongtao Cao, Guangcai Yuan, Chuan Liu. Addressing the Conflict between Mobility and Stability in Oxide Thin-film Transistors. Adv. Sci. 2023, 10, 2300373
*JunYan Ren, LingYan Liang*, Xiaohan Liu, Hongtao Cao. Physical properties of Zn-Sn-N films governed by the Zn/(Zn+ Sn) ratio. J. Vac. Sci. Technol. A 41, 033406 (2023)
*Wanfa Li, Lu Yang, Zhixiang Gao, Junyan Ren, Peixuan Hu, Ting Li, Lingyan Liang,* and Hongtao Cao, Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors. ACS Appl. Electron. Mater. 2023, 5, 1615−1619
*Wanli Ma, Zhongguo Li, Hongtao Cao, Lingyan Liang*, HaiShuang Lu, Yushen Liu, Yinglin Song. Modulating the nonlinear absorption response of SnOx thin films via phase engineering, Optics Express 31, 6252-6261, 2023.
*Zhongguo Li, Haijuan Wu, Hongtao Cao, Lingyan Liang*, Yanbing Han, Junyi Yang, Yinglin Song, and Clemens BurdaImproved. Ultrafast Carrier Relaxation and Charge Transfer Dynamics in CuI Films and Their Heterojunctions via Sn Doping. J. Phys. Chem. Lett. 13(2022) 9072−9078.
* Haijuan Wu, Lingyan Liang*, Xiaolong Wang, Xixiu Shi, Hengbo Zhang,Yu Pei, Wanfa Li, Bo Sun, Cai Shen, Hongtao Cao. High-mobility flexible/transparent p-type copper iodide thin-film transistors and complementary inverters. Applied Surface Science 612 (2023) 155795
* Yu Pei, Lingyan Liang*, Xiaolong Wang, Zhenhua Wang, Hengbo Zhang, Junyan Ren, and Hongtao Cao, Low-Temperature-Crystallized Ga2O3 Thin Films and Their TFT-Type Solar-Blind Photodetectors. J. Phys. Chem. Lett. 13(2022)7243−7251.
* Jiahuan Yu, Guosheng Gao, Bo Sun, Lingyan Liang*, Qiang Shen, Yang Zhang, Hongtao Cao, Optimization of sensing-pad functionalizing strategy toward separative extended-gate FET biosensors for PSA detection. Journal of Pharmaceutical and Biomedical Analysis 211 (2022) 114597
* H. B. Zhang, L.Y. Liang*, X. L. Wang, Z. D. Wu, H. T. Cao, Praseodymium-doped In-Sn-Zn-O TFTs with Effective Improvement of Negative-Bias Illumination Stress Stability. IEEE T. Electron Dev., 69, 152-155 (2022).
*X. L. Wan, L. Y. Liang*, H. B. Zhang, H. J. Wu, W. F. Li, C. Ning, G. C. Yuan, H. T. Cao, Huge Mobility Enhancement of InSnZnO Thin-Film Transistors via Al-Induced Microstructure Regularization, Appl. Phys. Lett., 119, 212102 (2021).
*Hongxiao Duan, Lingyan Liang*, Zhendong Wu, Hengbo Zhang, Lu Huang, and Hongtao Cao,IGZO/CsPbBr3-Nanoparticles/IGZO Neuromorphic Phototransistors and Their Optoelectronic Coupling Applications, ACS Applied Materials & Interfaces 2021 13 (25), 30165-30173
* Yu Pei, Lingyan Liang*, XiaoLong Wang, Kun Wang, HengBo Zhang, ZhenDong Wu, HaiJuan Wu, Hongliang Zhang, Junhua Gao, Hongtao Cao, Substrate-bias-aided preparation and properties of amorphous gallium oxide films and their deep-ultraviolet photodetectors, Ceramics International, 2021,47, 32138–32143.
* Haijuan Wu, Lingyan Liang*, Xiaolong Wang, Hengbo Zhang, Jinbiao Bao, and Hongtao Cao, Solution-processed amorphous p-type Cu-Sn-I thin films for transparent Cu-Sn-I/IGZO p–n junctions, Appl. Phys. Lett., 118, 222107 (2021)
* Z. G. Li, Z. D. Wu, X. L. Wang, H. T. Cao, L. Y. Liang*, J. Y. Yang, Y. L. Song*, Ultrafast carrier dynamics of amorphous zinc tin oxide graded thin films. J. Phys. Chem. C 125 (17), 9350-9355, 2021.
*Z. D. Wu, H. B. Zhang, X. L. Wang, W. S. Zhou, L. Y. Liang*, Y. W. Cao, H. T. Cao*, Effects of target quality on electrical performance and stability of In-Sn-Zn-O thin-film transistors. IEEE Elec. Dev. Let. 42, 529-532,2021.
* H. X. Duan, K. Javaid, L. Y. Liang*, L. Huang, J. H. Yu, H. L. Zhang, J. H. Gao, F. Zhuge, T.-C. Chang, H. T. Cao, Broadband Optoelectronic Synaptic Thin-Film Transistors Based on Oxide Semiconductors, Phys. Status Solidi RRL 2020, 1900630
* J. H. Yu, M. K. Xu, L. Y. Liang,* M. Guan, Y. Zhang, F. Yan, H. T. Cao, Separative extended-gate AlGaAs/GaAs HEMT biosensors based on capacitance change strategy, Appl. Phys. Lett., 116（2020）123704
* Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation J.J. Yu, L.Y. Liang*, L.X. Hu, H.X. Duan, W.H. Wu, H.L. Zhang, J.H. Gao, F. Zhuge, T.C. Changc, H.T. Cao,Nano Energy 62 (2019) 772–780
*Aqueous solution-processed, self-flattening AlOx:Y dielectrics for fullytransparent thin-film transistors Weihua Wu, Lingyan Liang*, Jingjing Yu, Xi Xiao, Hongliang Zhang, Junhua Gao, Fei Zhuge, Ting-Chang Chang, Linfeng Lan, Hongtao Cao Ceramics International 45 (2019) 15883–15891
*Lingyan Liang, Yu Liang, Weihua Wu, Anran Song, Jingjing Yu,Ting-Chang Chang, Linfeng Lan, Zhiqiang Yao and Hongtao Cao, Solution-processed Ga–Cd–O thin-films with tunable bandgaps and their transistors, J. Phys. D: Appl. Phys. 51 (2018) 335101
* Aqueous Solution Induced High-Dielectric-Constant AlOx:Y Films for Thin-Film Transistor Applications Weihua Wu, Kashif Javaid, Lingyan Liang*, Jingjing Yu, Yu Liang, Anran Song, Meiyi Yao, Linfeng Lan, and Hongtao Cao* , J. Nanosci. Nanotechnol. 18, 7566–7572 (2018)
* J. J. Yu, K. Javaid, L. Y. Liang, W. H. Wu, Y. Liang, A. R. Song, H. L. Zhang, W. Shi, T. C. Chang, H. T. Cao, High Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction, ACS Appl. Mater. Interfaces, 2018,10 : 8102–8109.
* A. R. Song, K. Javaid, Y. Liang, W. H. Wu, J. J. Yu, L. Y. Liang*, H. L. Zhang, L. F. Lan, T. C. Chang, H. T. Cao, Design, properties and TFT application of solution-processed In-Ga-Cd-O thin films, Phys. Status Solidi RRL 2018, 12（5）：201800034
* Kashif Javaid, Weihua Wu, Jun Wang, Junfeng Fang, Hongliang Zhang, Junhua Gao, Fei Zhuge, Lingyan Liang* and Hongtao Cao, Band offset engineering in ZnSnN2-based heterojunction for low-cost solar cells. ACS Photonics,2018, DOI: 10.1021/acsphotonics.8b00427
* Z. G. Li, H. T. Cao, A. R. Song, L. Y. Liang*, X. Z. Wu, J. Y. Yang and Y. L. Song, Ultrafast carrier dynamics in type-II ZnO-SnO heterostructure thin films, Appl. Phys. Lett., 2017, 110(17):172102.
* Y. F. Xie, K. Javaid, J. H. Gao, H. L. Zhang, L. Y. Liang*, F. Zhuge, H. T. Cao, L. Wang and Y. C. Lu，Combined control of cation and anion to make ZnSnON thin films for visible-light phototransistors with high responsivity, J. Mater. Chem. C, 2017, 5: 6480-6487
* K. Javaid, J. J. Yu, W. H. Wu, J. Wang, H. L. Zhang, J. H. Gao, F. Zhuge, L. Y. Liang*, and H. T. Cao*, Thin Film Solar Cell Based on ZnSnN2/SnO Heterojunction，Phys. Status Solidi RRL 2017, 1700332
* R. F. Qin, H. T. Cao, L. Y. Liang*, X. Y. Xie, F. Zhuge, H. L. Zhang, J. H. Gao, K. Javaid, C. C. Liu and W. Z. Sun*, Semiconducting ZnSnN2 thin films for Si/ZnSnN2 p-n junctions, Appl. Phys. Lett., 2016, 108(14): 142104.
* M. Wang, L.Y. Liang*, H. Luo, S. N. Zhang, H. L. Zhang, K. Javaid, H. T. Cao*, Threshold voltage tuning in a-IGZO TFTs with ultrathin SnOx capping layer and application to depletion-load inverter, IEEE Electron Dev. Lett., 2016, 37(4): 422.
* L. Y. Liang*, S. N. Zhang, W. H. Wu, L. Q. Zhu, H. Xiao, Y. H. Liu, H. L. Zhang, K. Javaid, H. T. Cao*, Extended-gate-type IGZO electric-double-layer TFT immunosensor with high sensitivity and low operation voltage, Appl. Phys. Lett., 2016,109(17): 173501.
*L. Y. Liang, J. J. Yu, M. Wang, and H. T. Cao, NMOS Logic Inverters Based on Threshold Voltage-Tunable IGZO Transistors, ECS Transactions, 2016, 75: 261-268,.
* Hao Luo, Lingyan Liang*, Hongtao Cao,* Mingzhi Dai, Yicheng Lu, Mei Wang, Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters, ACS Appl. Mater. Interfaces 2015, 7(31): 17023−17031.
* Quan Liu, Lingyan Liang,* Hongtao Cao,* Hao Luo, Hongliang Zhang, Jun Li, Xiuxia Li and Fuling Deng, Tunable crystallographic grain orientation and Raman fingerprints of polycrystalline SnO thin films, J. Mater. Chem. C, 2015, 3: 1077–1081
* Fuling Deng, Hongtao Cao, Lingyan Liang,* Jun Li, Junhua Gao, Hongliang Zhang, Ruifeng Qin, Caichi Liu*, Determination of the basic optical parameters of ZnSnN2, Optics Lett., 2015, 40(7):1282-1285.
* Xiuxia Li, Lingyan Liang*, Hongtao Cao, Ruifeng Qin, Hongliang Zhang, Junhua Gao, Fei Zhuge, Determination of some basic physical parameters of SnO based on SnO/Si pn heterojunctions, Appl. Phys. Lett., 2015, 1069130: 132102.
* Zhongguo Li, Lingyan Liang*, Hongtao Cao, Zhengguo Xiao, Xingzhi Wu, Yu Fang, Junyi Yang, Tai-Huei Wei,and Ying-lin Song, Ultrafast carrier dynamics in SnOx thin films, Appl. Phys. Lett., 2015,106(10): 102103.
* H. Luo, L. Y. Liang*, Q. Liu, and H. T. Cao, Magnetron-Sputtered SnO Thin Films for p-Type and Ambipolar TFT Applications, ECS J. Solid State Sci. Technol., 2014, 3(9): Q3091-Q3094.
* L. Y. Liang*, H. T. Cao*, Q. Liu, K. M. Jiang, Z. M. Liu, F. Zhuge, F. L. Deng, Substrate biasing effect on the physical properties of reactive RF-magnetron- sputtered aluminum oxide dielectric films on ITO glasses, ACS Appl. Mater. Interfaces, 2014, 6(4): 2255-2261.
* H. Luo, L. Y. Liang*, H. T. Cao*, Z. M. Liu, F. Zhuge, Structural, Chemical, Optical, and Electrical Evolution of SnOx Films Deposited by Reactive rf Magnetron Sputtering, ACS Appl. Mater. Interfaces, 2012, 4(10): 5673.
* L. Y. Liang, H. T. Cao*, X. B. Chen, Z. M. Liu, F. Zhuge, H. Luo, J. Li, Y. C. Lu, W. Lu, Ambipolar inverters using SnO thin-film transistors with balanced electronand hole mobilities, Appl. Phys. Lett., 2012, 100(26): 263502.
* L. Y. Liang, Z. M. Liu, H. T. Cao*, W. Y. Xu, X. L. Sun, H. Luo and K. Cang, The structural, optical and electrical properties of Y-doped SnO thin films and their p-type TFT application, J. Phys. D: Appl. Phys., 2012, 45(8): 085101.
* Z. M. Liu, L. Y. Liang*, Z. Yu, S. K. He, X. J. Ye, X. L. Sun, A. H. Sun, and H. T. Cao*, Structural and Electrical Characteristics of RF Sputtered YON Gate Dielectrics and Their Thin Film Transistor Applications, J. Phys. D: Appl. Phys., 2011, 44(15):155403.
* L. Y. Liang, Z. M. Liu, H. T. Cao*, Y. Y. Shi, X. L. Sun, Z. Yu, A. H. Chen, H. Z. Zhang, Y. Q. Fang, Improvement of Phase Stability and Accurate Determination of Optical Constants of SnO Thin Films by using Al2O3 Capping layer, ACS Appl. Mater. Interfaces, 2010, 2(6): 1565.
* L. Y. Liang, Z. M. Liu, H. T. Cao*, Z. Yu, Y. Y. Shi, A. H. Chen, H. Z. Zhang, Y. Q. Fang, X. L. Sun, Phase and optical characterization of annealed SnO thin films and their p-type TFT application, J. Electrochem. Soc., 2010, 157(6): H598.
*L. Y. Liang, Z. M. Liu, H. T. Cao*, X. Q. Pan, Microstructure, optical, and electrical properties of SnO thin films prepared on quartz via a two-step method, ACS Appl. Mater. Interfaces, 2010, 2(4): 1060.
著作章节：
Hongtao Cao,Lingyan Liang; Tin oxide-based thin-film transistors and their circuits, In book: Tin oxide Materials: Synthesis, Properties, and Applications. Elsevier 2020. https://doi.org/10.1016/B978-0-12-815924-8.00001-3
会议论文或报告：
* L. Y. Liang*，The Physical Properties of Zinc Tin nitride/oxynitride thin films and their optoelectronics applications，第21届固态离子学国际会议（SSI-21），意大利，帕多瓦，2017年6月18-23，邀请报告。
*L. Y. Liang*，The physical properties of Zn-Sn-N thin films and their TFT application, IEEE CAD-TFT 2016, 中国,北京, 2016年10月26-28, Oral report.
* L. Y. Liang*, J. J. Yu, M. Wang and H. T. Cao，NMOS Logic Inverters Based on Threshold Voltage-Tunable IGZO Transistors ECS Transactions, 75 (10) 261-268, 2016. （ISTP/EI收录）
*梁凌燕，氮化锌锡薄膜光伏材料制备与研究, 2015中国材料大会，贵阳， 2015年7月10-14日，口头报告。
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